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MJD32C-13
MJD32C-13
GP BJT MJD32C-13
Diodes Incorporated
MJD32C-13
--
Diodes, Transistors and Thyristors
GP BJT
MJD32C-13.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
TypePNP
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusActive
ConfigurationSingle
Package Width6.2(Max)
Package Height2.4(Max)
Package Length6.8(Max)
Product CategoryBipolar Power
Supplier PackageDPAK
Standard Package NameTO-252
Minimum DC Current Gain25@1A@4V|10@3A@4V
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)3900
Maximum DC Collector Current (A)3
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)100
Maximum Transition Frequency (MHz)3(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)100
Maximum Collector-Emitter Saturation Voltage (V)1.2@375mA@3A
Description
Trans GP BJT PNP 100V 3A 3900mW 3-Pin(2+Tab) DPAK T/R
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