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MJD32CT4
MJD32CT4
GP BJT MJD32CT4
STMicroelectronics
MJD32CT4
--
Diodes, Transistors and Thyristors
GP BJT
MJD32CT4.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypePNP
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusUnconfirmed
ConfigurationSingle
Package Width6.2(Max)
Package Height2.4(Max)
Package Length6.6(Max)
Product CategoryBipolar Power
Supplier PackageDPAK
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Minimum DC Current Gain20@500mA@10V|3@0.5A@10V
Number of Elements per Chip1
Maximum Power Dissipation (mW)15000
Maximum DC Collector Current (A)3
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)100
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)100
Maximum Collector-Emitter Saturation Voltage (V)1.2@375mA@3A
Description
Trans GP BJT PNP 100V 3A 15000mW 3-Pin(2+Tab) DPAK T/R
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