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MJD32CTF_SBDD002
MJD32CTF_SBDD002
GP BJT MJD32CTF_SBDD002
onsemi
MJD32CTF_SBDD002
--
Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
TypePNP
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed2
Part StatusObsolete
ConfigurationSingle
Package Width6.3(Max)
Package Height2.4(Max)
Package Length6.8(Max)
Product CategoryBipolar Power
Supplier PackageDPAK
Standard Package NameTO-252
Minimum DC Current Gain25@1A@4V|10@3A@4V
Maximum Base Current (A)1
Number of Elements per Chip1
Maximum Power Dissipation (mW)1560
Maximum DC Collector Current (A)3
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)100
Maximum Transition Frequency (MHz)3(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Operating Junction Temperature (°C)-65 to 150
Maximum Collector-Emitter Voltage (V)100
Maximum Collector-Emitter Saturation Voltage (V)1.2@375mA@3A
Description
Trans GP BJT PNP 100V 3A 1560mW 3-Pin(2+Tab) DPAK
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