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MJD44H11J
MJD44H11J
GP BJT MJD44H11J
Nexperia
MJD44H11J
--
Diodes, Transistors and Thyristors
GP BJT
MJD44H11J.pdf
Specification
Product AttributeAttribute Value
TabTab
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
PCB changed2
Part StatusActive
Package Width6.22(Max)
Package Height2.38(Max)
Package Length6.73(Max)
Supplier PackageDPAK
Maximum Power Dissipation (mW)1750
Maximum DC Collector Current (A)8
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Operating Junction Temperature (°C)150
Maximum Collector-Emitter Voltage (V)80
Description
80 V, 8 A NPN high power bipolar transistor
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