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MJD45H11-001G
MJD45H11-001G
GP BJT MJD45H11-001G
onsemi
MJD45H11-001G
--
Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
TypePNP
EU RoHSCompliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingRail
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width2.38(Max)
Package Height6.35(Max)
Package Length6.73(Max)
Product CategoryBipolar Power
Supplier PackageIPAK
Standard Package NameTO-251
Minimum DC Current Gain60@2A@1V|40@4A@1V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1750
Maximum DC Collector Current (A)8
Maximum Emitter Base Voltage (V)5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Operating Junction Temperature (°C)-55 to 150
Maximum Collector-Emitter Voltage (V)80
Maximum Base Emitter Saturation Voltage (V)1.5@0.8A@8A
Maximum Collector-Emitter Saturation Voltage (V)1@0.4A@8A
Description
Trans GP BJT PNP 80V 8A 1750mW 3-Pin(3+Tab) IPAK Rail
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