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MJD45H11T4-A
MJD45H11T4-A
GP BJT MJD45H11T4-A
STMicroelectronics
MJD45H11T4-A
--
Diodes, Transistors and Thyristors
GP BJT
MJD45H11T4-A.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPUnknown
SVHCYes
TypePNP
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveYes
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
ConfigurationSingle
Package Width6.2(Max)
Package Height2.4(Max)
Package Length6.6(Max)
Product CategoryBipolar Power
Supplier PackageDPAK
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Minimum DC Current Gain60@2A@1V|40@4A@1V
Number of Elements per Chip1
Maximum Power Dissipation (mW)20000
Maximum DC Collector Current (A)8
Maximum Emitter Base Voltage (V)5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)80
Maximum Base Emitter Saturation Voltage (V)1.5@0.8A@8A
Maximum Collector-Emitter Saturation Voltage (V)1@0.4A@8A
Description
Trans GP BJT PNP 80V 8A 20000mW Automotive 3-Pin(2+Tab) DPAK T/R
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