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MJD47T4
MJD47T4
GP BJT MJD47T4
STMicroelectronics
MJD47T4
--
Diodes, Transistors and Thyristors
GP BJT
MJD47T4.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusActive
ConfigurationSingle
Package Width6.2(Max)
Package Height2.4(Max)
Package Length6.6(Max)
Product CategoryBipolar Power
Supplier PackageDPAK
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Minimum DC Current Gain10@1A@10V|30@300mA@10V
Number of Elements per Chip1
Maximum Power Dissipation (mW)15000
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)350
Maximum Transition Frequency (MHz)10(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)250
Maximum Collector-Emitter Saturation Voltage (V)1@0.2A@1A
Description
Trans GP BJT NPN 250V 1A 15000mW 3-Pin(2+Tab) DPAK T/R
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