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MJE15032G
MJE15032G
GP BJT MJE15032G
onsemi
MJE15032G
--
Diodes, Transistors and Thyristors
GP BJT
MJE15032G.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width4.83(Max)
Package Height9.28(Max)
Package Length10.53(Max)
Product CategoryBipolar Power
Supplier PackageTO-220AB
Standard Package NameTO-220
SVHC Exceeds ThresholdYes
Minimum DC Current Gain70@500mA@5V|50@1A@5V|10@2A@5V
Maximum Base Current (A)2
Number of Elements per Chip1
Maximum Power Dissipation (mW)2000
Maximum DC Collector Current (A)8
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)250
Maximum Transition Frequency (MHz)30(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Operating Junction Temperature (°C)-65 to 150
Maximum Collector-Emitter Voltage (V)250
Maximum Collector Cut-Off Current (nA)10000
Maximum Collector-Emitter Saturation Voltage (V)0.5@0.1A@1A
Description
Trans GP BJT NPN 250V 8A 2000mW 3-Pin(3+Tab) TO-220AB Tube
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