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MJE180
MJE180
GP BJT MJE180
onsemi
MJE180
--
Diodes, Transistors and Thyristors
GP BJT
MJE180.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSNot Compliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBox
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width3(Max)
Package Height11.1(Max)
Package Length7.8(Max)
Product CategoryBipolar Power
Supplier PackageTO-225
SVHC Exceeds ThresholdYes
Minimum DC Current Gain50@100mA@1V|30@500mA@1V|12@1.5A@1V
Number of Elements per Chip1
Maximum Power Dissipation (mW)12500
Maximum DC Collector Current (A)3
Maximum Emitter Base Voltage (V)7
Maximum Collector Base Voltage (V)60
Maximum Transition Frequency (MHz)50(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)40
Maximum Base Emitter Saturation Voltage (V)1.5@150mA@1.5A|2@600mA@3A
Maximum Collector-Emitter Saturation Voltage (V)0.3@50mA@500mA|0.9@150mA@1.5A|1.7@600mA@3A
Description
Trans GP BJT NPN 40V 3A 12500mW 3-Pin(3+Tab) TO-225 Box
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