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MJE181G
MJE181G
GP BJT MJE181G
onsemi
MJE181G
--
Diodes, Transistors and Thyristors
GP BJT
MJE181G.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBox
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width3(Max)
Package Height11.1(Max)
Package Length7.8(Max)
Product CategoryBipolar Power
Supplier PackageTO-225
Minimum DC Current Gain50@100mA@1V|30@500mA@1V|12@1.5A@1V
Maximum Base Current (A)1
Number of Elements per Chip1
Maximum Power Dissipation (mW)1500
Maximum DC Collector Current (A)3
Maximum Emitter Base Voltage (V)7
Maximum Collector Base Voltage (V)80
Maximum Transition Frequency (MHz)50(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Operating Junction Temperature (°C)-65 to 150
Maximum Collector-Emitter Voltage (V)60
Maximum Collector Cut-Off Current (nA)100
Maximum Base Emitter Saturation Voltage (V)1.5@150mA@1.5A|2@600mA@3A
Maximum Collector-Emitter Saturation Voltage (V)0.3@50mA@500mA|0.9@150mA@1.5A|1.7@600mA@3A
Description
Trans GP BJT NPN 60V 3A 1500mW 3-Pin(3+Tab) TO-225 Box
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