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MJE210TG
MJE210TG
GP BJT MJE210TG
onsemi
MJE210TG
--
Diodes, Transistors and Thyristors
GP BJT
MJE210TG.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
TypePNP
EU RoHSCompliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBox
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width3(Max)
Package Height11.1(Max)
Package Length7.8(Max)
Product CategoryBipolar Power
Supplier PackageTO-225
Minimum DC Current Gain70@500mA@1V|45@2A@1V|10@5A@2V
Maximum Base Current (A)1
Number of Elements per Chip1
Maximum Power Dissipation (mW)15000
Maximum DC Collector Current (A)5
Maximum Emitter Base Voltage (V)8
Maximum Collector Base Voltage (V)40
Maximum Transition Frequency (MHz)65(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Operating Junction Temperature (°C)-65 to 150
Maximum Collector-Emitter Voltage (V)25
Maximum Collector Cut-Off Current (nA)100
Maximum Base Emitter Saturation Voltage (V)2.5@1A@5A
Maximum Collector-Emitter Saturation Voltage (V)0.3@50mA@500mA|0.75@200mA@2A|1.8@1A@5A
Description
Trans GP BJT PNP 25V 5A 15000mW 3-Pin(3+Tab) TO-225 Box
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