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MJE243
MJE243
GP BJT MJE243
onsemi
MJE243
--
Diodes, Transistors and Thyristors
GP BJT
MJE243.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSNot Compliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBox
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width3(Max)
Package Height11.1(Max)
Package Length7.8(Max)
Product CategoryBipolar Power
Supplier PackageTO-225
SVHC Exceeds ThresholdYes
Minimum DC Current Gain15@1A@1V|40@200mA@1V
Number of Elements per Chip1
Maximum Power Dissipation (mW)15000
Maximum DC Collector Current (A)4
Maximum Emitter Base Voltage (V)7
Maximum Collector Base Voltage (V)100
Maximum Transition Frequency (MHz)40(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)100
Maximum Base Emitter Saturation Voltage (V)1.8@200mA@2A
Maximum Collector-Emitter Saturation Voltage (V)0.6@100mA@1A|0.3@50mA@500mA
Description
Trans GP BJT NPN 100V 4A 15000mW 3-Pin(3+Tab) TO-225 Box
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