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MJE253G
MJE253G
GP BJT MJE253G
onsemi
MJE253G
--
Diodes, Transistors and Thyristors
GP BJT
MJE253G.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
TypePNP
EU RoHSCompliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBox
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width3(Max)
Package Height11.1(Max)
Package Length7.8(Max)
Product CategoryBipolar Power
Supplier PackageTO-225
Minimum DC Current Gain40@200mA@1V|15@1A@1V
Number of Elements per Chip1
Maximum Power Dissipation (mW)15000
Maximum DC Collector Current (A)4
Maximum Emitter Base Voltage (V)7
Maximum Collector Base Voltage (V)100
Maximum Transition Frequency (MHz)40(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)100
Maximum Collector Cut-Off Current (nA)100
Maximum Base Emitter Saturation Voltage (V)1.8@200mA@2A
Maximum Collector-Emitter Saturation Voltage (V)0.3@50mA@500mA|0.6@100mA@1A
Description
Trans GP BJT PNP 100V 4A 15000mW 3-Pin(3+Tab) TO-225 Box
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