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MJE350G
MJE350G
GP BJT MJE350G
onsemi
MJE350G
--
Diodes, Transistors and Thyristors
GP BJT
MJE350G.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
TypePNP
EU RoHSCompliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBox
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width3(Max)
Package Height11.1(Max)
Package Length7.8(Max)
Product CategoryBipolar Power
Supplier PackageTO-225
Minimum DC Current Gain30@50mA@10V
Number of Elements per Chip1
Maximum Power Dissipation (mW)20000
Maximum DC Collector Current (A)0.5
Maximum Emitter Base Voltage (V)3
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Operating Junction Temperature (°C)-65 to 150
Maximum Collector-Emitter Voltage (V)300
Maximum Collector Cut-Off Current (nA)100000
Description
Trans GP BJT PNP 300V 0.5A 20000mW 3-Pin(3+Tab) TO-225 Box
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