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MJE4343G
MJE4343G
GP BJT MJE4343G
onsemi
MJE4343G
--
Diodes, Transistors and Thyristors
GP BJT
MJE4343G.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width5.3(Max)
Package Height21.08(Max)
Package Length16.26(Max)
Product CategoryBipolar Power
Supplier PackageTO-247
Standard Package NameTO-247
Minimum DC Current Gain8@16A@4V|15@8A@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)125000
Maximum DC Collector Current (A)16
Maximum Emitter Base Voltage (V)7
Maximum Collector Base Voltage (V)160
Maximum Transition Frequency (MHz)1(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)160
Maximum Base Emitter Saturation Voltage (V)3.9@2A@16A
Maximum Collector-Emitter Saturation Voltage (V)3.5@2A@16A|2@800mA@8A
Description
Trans GP BJT NPN 160V 16A 125000mW 3-Pin(3+Tab) TO-247 Tube
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