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MJF44H11G
MJF44H11G
GP BJT MJF44H11G
onsemi
MJF44H11G
--
Diodes, Transistors and Thyristors
GP BJT
MJF44H11G.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width4.9(Max)
Package Height16.12(Max)
Package Length10.63(Max)
Product CategoryBipolar Power
Supplier PackageTO-220FP
Standard Package NameTO-220
SVHC Exceeds ThresholdYes
Minimum DC Current Gain40@4A@1V|60@2A@1V
Number of Elements per Chip1
Maximum Power Dissipation (mW)2000
Maximum DC Collector Current (A)10
Maximum Emitter Base Voltage (V)5
Maximum Transition Frequency (MHz)50(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)80
Maximum Base Emitter Saturation Voltage (V)1.5@0.8A@8A
Maximum Collector-Emitter Saturation Voltage (V)1@0.4A@8A
Description
Trans GP BJT NPN 80V 10A 2000mW 3-Pin(3+Tab) TO-220FP Tube
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