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MMBT2222AM3T5G
MMBT2222AM3T5G
GP BJT MMBT2222AM3T5G
onsemi
MMBT2222AM3T5G
--
Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeFlat
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width0.8
Package Height0.5
Package Length1.2
Product CategoryBipolar Small Signal
Supplier PackageSOT-723
Standard Package NameSOT-723
Minimum DC Current Gain35@0.1mA@10V|50@1mA@10V|75@10mA@10V|100@150mA@10V|40@500mA@10V|50@150mA@1V
Number of Elements per Chip1
Maximum Power Dissipation (mW)640
Maximum DC Collector Current (A)0.6
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)75
Maximum Transition Frequency (MHz)300(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)40
Maximum Collector Cut-Off Current (nA)10
Maximum Base Emitter Saturation Voltage (V)1.2@15mA@150mA|2@50mA@500mA
Maximum Collector-Emitter Saturation Voltage (V)0.3@15mA@150mA|1@50mA@500mA
Description
Trans GP BJT NPN 40V 0.6A 640mW 3-Pin SOT-723 T/R
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