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MMBT2369ALT1G
MMBT2369ALT1G
GP BJT MMBT2369ALT1G
onsemi
MMBT2369ALT1G
--
Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width1.3
Package Height0.94
Package Length2.9
Product CategoryBipolar Small Signal
Supplier PackageSOT-23
Standard Package NameSOT
Minimum DC Current Gain40@10mA@0.35V|30@30mA@0.4V|20@100mA@1V
Number of Elements per Chip1
Maximum Power Dissipation (mW)300
Maximum DC Collector Current (A)0.2
Maximum Emitter Base Voltage (V)4.5
Maximum Collector Base Voltage (V)40
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Operating Junction Temperature (°C)-55 to 150
Maximum Collector-Emitter Voltage (V)15
Maximum Collector Cut-Off Current (nA)400
Maximum Base Emitter Saturation Voltage (V)0.85@1mA@10mA|1.15@3mA@30mA|1.6@10mA@100mA
Maximum Collector-Emitter Saturation Voltage (V)0.2@1mA@10mA|0.25@3mA@30mA|0.5@10mA@100mA
Description
Trans GP BJT NPN 15V 0.2A 300mW 3-Pin SOT-23 T/R
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