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MMBT2369LT1G
MMBT2369LT1G
GP BJT MMBT2369LT1G
onsemi
MMBT2369LT1G
--
Diodes, Transistors and Thyristors
GP BJT
MMBT2369LT1G.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width1.3
Package Height0.94
Package Length2.9
Product CategoryBipolar Small Signal
Supplier PackageSOT-23
Standard Package NameSOT
Minimum DC Current Gain40@10mA@1V|20@100mA@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)300
Maximum DC Collector Current (A)0.2
Maximum Emitter Base Voltage (V)4.5
Maximum Collector Base Voltage (V)40
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Operating Junction Temperature (°C)-55 to 150
Maximum Collector-Emitter Voltage (V)15
Maximum Collector Cut-Off Current (nA)400
Maximum Base Emitter Saturation Voltage (V)0.85@1mA@10mA
Maximum Collector-Emitter Saturation Voltage (V)0.25@1mA@10mA
Description
Trans GP BJT NPN 15V 0.2A 300mW 3-Pin SOT-23 T/R
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