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MMBT4126LT3G
MMBT4126LT3G
GP BJT MMBT4126LT3G
onsemi
MMBT4126LT3G
--
Diodes, Transistors and Thyristors
GP BJT
MMBT4126LT3G.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.75
PPAPNo
TypePNP
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width1.3
Package Height0.94
Package Length2.9
Product CategoryBipolar Small Signal
Supplier PackageSOT-23
Standard Package NameSOT
Minimum DC Current Gain120@2mA@1V|60@50mA@1V
Number of Elements per Chip1
Maximum Power Dissipation (mW)300
Maximum DC Collector Current (A)0.2
Maximum Emitter Base Voltage (V)4
Maximum Collector Base Voltage (V)25
Maximum Transition Frequency (MHz)250(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)25
Maximum Base Emitter Saturation Voltage (V)0.95@5mA@50mA
Maximum Collector-Emitter Saturation Voltage (V)0.4@5mA@50mA
Description
Trans GP BJT PNP 25V 0.2A 300mW 3-Pin SOT-23 T/R
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