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MMBT5089LT1G
MMBT5089LT1G
GP BJT MMBT5089LT1G
onsemi
MMBT5089LT1G
--
Diodes, Transistors and Thyristors
GP BJT
MMBT5089LT1G.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width1.3
Package Height0.94
Package Length2.9
Product CategoryBipolar Small Signal
Supplier PackageSOT-23
Standard Package NameSOT
Minimum DC Current Gain400@100uA@5V|450@1mA@5V|400@10mA@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)300
Maximum DC Collector Current (A)0.05
Maximum Emitter Base Voltage (V)4.5
Maximum Collector Base Voltage (V)30
Maximum Transition Frequency (MHz)50(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Operating Junction Temperature (°C)-55 to 150
Maximum Collector-Emitter Voltage (V)25
Maximum Collector Cut-Off Current (nA)50
Maximum Base Emitter Saturation Voltage (V)0.8@1mA@10mA
Maximum Collector-Emitter Saturation Voltage (V)0.5@1mA@10mA
Description
Trans GP BJT NPN 25V 0.05A 300mW 3-Pin SOT-23 T/R
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