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MMBT6429LT1
MMBT6429LT1
GP BJT MMBT6429LT1
onsemi
MMBT6429LT1
--
Diodes, Transistors and Thyristors
GP BJT
MMBT6429LT1.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
SVHCYes
TypeNPN
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width1.3
Package Height0.94
Package Length2.9
Product CategoryBipolar Small Signal
Supplier PackageSOT-23
Standard Package NameSOT
SVHC Exceeds ThresholdYes
Minimum DC Current Gain500@0.01mA@5V|500@0.1mA@5V|500@1mA@5V|500@10mA@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)300
Maximum DC Collector Current (A)0.2
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)55
Maximum Transition Frequency (MHz)700
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)45
Maximum Collector-Emitter Saturation Voltage (V)0.2@0.5mA@10mA|0.6@5mA@100mA
Description
Trans GP BJT NPN 45V 0.2A 300mW 3-Pin SOT-23 T/R
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