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MMBTA56WT1G
MMBTA56WT1G
GP BJT MMBTA56WT1G
onsemi
MMBTA56WT1G
--
Diodes, Transistors and Thyristors
GP BJT
MMBTA56WT1G.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
TypePNP
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width1.24
Package Height0.85
Package Length2.1
Product CategoryBipolar Small Signal
Supplier PackageSC-70
Standard Package NameSOT
Minimum DC Current Gain100@100mA@1V|100@10mA@1V
Number of Elements per Chip1
Maximum Power Dissipation (mW)150
Maximum DC Collector Current (A)0.5
Maximum Emitter Base Voltage (V)4
Maximum Collector Base Voltage (V)80
Maximum Transition Frequency (MHz)50(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)80
Maximum Collector-Emitter Saturation Voltage (V)0.25@10mA@100mA
Description
Trans GP BJT PNP 80V 0.5A 150mW 3-Pin SC-70 T/R
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