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MMPQ2222A
MMPQ2222A
GP BJT MMPQ2222A
onsemi
MMPQ2222A
--
Diodes, Transistors and Thyristors
GP BJT
MMPQ2222A.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count16
AutomotiveNo
Lead ShapeGull-wing
PCB changed16
Part StatusActive
ConfigurationQuad Dual Collector
Package Width3.9
Package Height1.5(Max)
Package Length9.9
Product CategoryBipolar Power
Supplier PackageSOIC N
Standard Package NameSOP
Minimum DC Current Gain35@100uA@10V|75@10mA@10V|50@1mA@10V|40@500mA@10V|100@150mA@10V|50@150mA@1V
Number of Elements per Chip4
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)0.5
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)75
Maximum Transition Frequency (MHz)300(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Operating Junction Temperature (°C)-55 to 150
Maximum Collector-Emitter Voltage (V)45
Maximum Collector Cut-Off Current (nA)10
Maximum Base Emitter Saturation Voltage (V)2@50mA@500mA|1.2@15mA@150mA
Maximum Collector-Emitter Saturation Voltage (V)1@50mA@500mA|0.3@15mA@150mA
Description
Trans GP BJT NPN 45V 0.5A 1000mW 16-Pin SOIC N T/R
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