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MPS3646G
MPS3646G
GP BJT MPS3646G
onsemi
MPS3646G
--
Diodes, Transistors and Thyristors
GP BJT
MPS3646G.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBox
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width4.19(Max)
Package Height5.33(Max)
Package Length5.2(Max)
Product CategoryBipolar Small Signal
Supplier PackageTO-92
Standard Package NameTO-92
Minimum DC Current Gain15@300mA@1V|25@100mA@0.5V|30@30mA@0.4V
Number of Elements per Chip1
Maximum Power Dissipation (mW)625
Maximum DC Collector Current (A)0.3
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)40
Maximum Transition Frequency (MHz)350(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Operating Junction Temperature (°C)-55 to 150
Maximum Collector-Emitter Voltage (V)15
Maximum Base Emitter Saturation Voltage (V)1.7@20mA@300mA|1.2@10mA@100mA|0.95@3mA@30mA
Maximum Collector-Emitter Saturation Voltage (V)0.2@3mA@30mA|0.28@10mA@100mA|0.5@20mA@300mA
Description
Trans GP BJT NPN 15V 0.3A 625mW 3-Pin TO-92 Box
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