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MPS650G
MPS650G
GP BJT MPS650G
onsemi
MPS650G
--
Diodes, Transistors and Thyristors
GP BJT
MPS650G.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
TypeNPN
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingBox
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width4.19(Max)
Package Height5.33(Max)
Package Length5.2(Max)
Product CategoryBipolar Small Signal
Supplier PackageTO-92
Standard Package NameTO-92
Minimum DC Current Gain75@50mA@2V|75@500mA@2V|75@1A@2V|40@2A@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)625
Maximum DC Collector Current (A)2
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)60
Maximum Transition Frequency (MHz)75(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)40
Maximum Collector Cut-Off Current (nA)100
Maximum Base Emitter Saturation Voltage (V)1.2@100mA@1A
Maximum Collector-Emitter Saturation Voltage (V)0.3@100mA@1A|0.5@200mA@2A
Description
Trans GP BJT NPN 40V 2A 625mW 3-Pin TO-92 Box
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