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MPSA56,116
MPSA56,116
GP BJT MPSA56,116
NXP
MPSA56,116
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Diodes, Transistors and Thyristors
GP BJT
MPSA56,116.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypePNP
EU RoHSSupplier Unconfirmed
MountingThrough Hole
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed3
Part StatusUnconfirmed
ConfigurationSingle
Package Width4.2(Max)
Package Height5.2(Max)
Package Length4.8(Max)
Product CategoryBipolar Small Signal
Supplier PackageTO-92
Minimum DC Current Gain100@100mA@1V|100@10mA@1V
Number of Elements per Chip1
Maximum Power Dissipation (mW)625
Maximum DC Collector Current (A)0.5
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)80
Maximum Transition Frequency (MHz)50(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)80
Maximum Collector-Emitter Saturation Voltage (V)0.25@10mA@100mA
Description
Trans GP BJT PNP 80V 0.5A 625mW 3-Pin TO-92 T/R
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