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MPSW42G
MPSW42G
GP BJT MPSW42G
onsemi
MPSW42G
--
Diodes, Transistors and Thyristors
GP BJT
MPSW42G.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBox
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width4.19(Max)
Package Height7.87(Max)
Package Length5.21(Max)
Product CategoryBipolar Power
Supplier PackageTO-92
Standard Package NameTO-92
Minimum DC Current Gain25@1mA@10V|40@10mA@10V|40@30mA@10V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)0.5
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)300
Maximum Transition Frequency (MHz)50(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)300
Maximum Collector Cut-Off Current (nA)100
Maximum Base Emitter Saturation Voltage (V)0.9@2mA@20mA
Maximum Collector-Emitter Saturation Voltage (V)0.5@2mA@20mA
Description
Trans GP BJT NPN 300V 0.5A 1000mW 3-Pin TO-92 Box
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