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MPSW51AG
MPSW51AG
GP BJT MPSW51AG
onsemi
MPSW51AG
--
Diodes, Transistors and Thyristors
GP BJT
MPSW51AG.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypePNP
EU RoHSCompliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBox
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width4.19(Max)
Package Height7.87(Max)
Package Length5.21(Max)
Product CategoryBipolar Power
Supplier PackageTO-92
Standard Package NameTO-92
Minimum DC Current Gain55@10mA@1V|60@100mA@1V|50@1A@1V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)50
Maximum Transition Frequency (MHz)50(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)40
Maximum Collector Cut-Off Current (nA)100
Maximum Collector-Emitter Saturation Voltage (V)0.7@100mA@1A
Description
Trans GP BJT PNP 40V 1A 1000mW 3-Pin TO-92 Box
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