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MSA1162YT1G
MSA1162YT1G
GP BJT MSA1162YT1G
onsemi
MSA1162YT1G
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Diodes, Transistors and Thyristors
GP BJT
MSA1162YT1G.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypePNP
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width1.5
Package Height1.09
Package Length2.9
Product CategoryBipolar Small Signal
Supplier PackageSC-59
Standard Package NameSC
Minimum DC Current Gain120@2mA@6V
Number of Elements per Chip1
Maximum Power Dissipation (mW)200
Maximum DC Collector Current (A)0.1
Maximum Emitter Base Voltage (V)7
Maximum Collector Base Voltage (V)60
Maximum Transition Frequency (MHz)80(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)50
Maximum Collector-Emitter Saturation Voltage (V)0.5@10mA@100mA
Description
Trans GP BJT PNP 50V 0.1A 200mW 3-Pin SC-59 T/R
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