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MSD42T1G
MSD42T1G
GP BJT MSD42T1G
onsemi
MSD42T1G
--
Diodes, Transistors and Thyristors
GP BJT
MSD42T1G.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width1.5
Package Height1.09
Package Length2.9
Product CategoryBipolar Small Signal
Supplier PackageSC-59
Standard Package NameSC
Minimum DC Current Gain25@1mA@10V|40@30mA@10V
Number of Elements per Chip1
Maximum Power Dissipation (mW)150
Maximum DC Collector Current (A)0.15
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)300
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)300
Maximum Collector-Emitter Saturation Voltage (V)0.5@2mA@20mA
Description
Trans GP BJT NPN 300V 0.15A 150mW 3-Pin SC-59 T/R
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