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MSD601-RT1G
MSD601-RT1G
GP BJT MSD601-RT1G
onsemi
MSD601-RT1G
--
Diodes, Transistors and Thyristors
GP BJT
MSD601-RT1G.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
TypeNPN
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width1.5
Package Height1.09
Package Length2.9
Product CategoryBipolar Small Signal
Supplier PackageSC-59
Standard Package NameSC
Minimum DC Current Gain90@100mA@2V|210@2mA@10V
Number of Elements per Chip1
Maximum Power Dissipation (mW)200
Maximum DC Collector Current (A)0.1
Maximum Emitter Base Voltage (V)7
Maximum Collector Base Voltage (V)60
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Operating Junction Temperature (°C)150
Maximum Collector-Emitter Voltage (V)50
Maximum Collector-Emitter Saturation Voltage (V)0.5@10mA@100mA
Description
Trans GP BJT NPN 50V 0.1A 200mW 3-Pin SC-59 T/R
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