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NJVMJD253T4G-VF01
NJVMJD253T4G-VF01
GP BJT NJVMJD253T4G-VF01
onsemi
NJVMJD253T4G-VF01
--
Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
HTS8541.29.00.75
TabTab
PPAPYes
SVHCYes
TypePNP
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveYes
Lead ShapeGull-wing
PCB changed2
Part StatusLTB
ConfigurationSingle
Package Width6.22(Max)
Package Height2.38(Max)
Package Length6.73(Max)
Product CategoryBipolar Power
Supplier PackageDPAK
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Minimum DC Current Gain40@200mA@1V|15@1A@1V
Maximum Base Current (A)1
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)1400
Maximum DC Collector Current (A)4
Maximum Emitter Base Voltage (V)7
Maximum Collector Base Voltage (V)100
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Operating Junction Temperature (°C)-65 to 150
Maximum Collector-Emitter Voltage (V)100
Maximum Collector Cut-Off Current (nA)100
Maximum Base Emitter Saturation Voltage (V)1.8@200mA@2A
Maximum Collector-Emitter Saturation Voltage (V)0.3@50mA@500mA|0.6@100mA@1A
Description
Trans GP BJT PNP 100V 4A 1400mW Automotive 3-Pin(2+Tab) DPAK T/R
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