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NJVMJD42CT4G-VF01
NJVMJD42CT4G-VF01
GP BJT NJVMJD42CT4G-VF01
onsemi
NJVMJD42CT4G-VF01
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Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
TabTab
PPAPYes
SVHCYes
TypePNP
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveYes
PCB changed2
Part StatusLTB
ConfigurationSingle Dual Collector
Package Width6.22(Max)
Package Height2.38(Max)
Package Length6.73(Max)
Product CategoryBipolar Power
Supplier PackageDPAK
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Minimum DC Current Gain15@3A@4V|30@0.3A@4V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1750
Maximum DC Collector Current (A)6
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)100
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)100
Maximum Collector-Emitter Saturation Voltage (V)1.5@600mA@6A
Description
Trans GP BJT PNP 100V 6A 1750mW Automotive 3-Pin(2+Tab) DPAK T/R
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