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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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NJVMJD45H11T4G
NJVMJD45H11T4G
GP BJT NJVMJD45H11T4G
onsemi
NJVMJD45H11T4G
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Diodes, Transistors and Thyristors
GP BJT
NJVMJD45H11T4G.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPYes
SVHCYes
TypePNP
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveYes
Lead ShapeGull-wing
PCB changed2
Part StatusActive
ConfigurationSingle
Package Width6.22(Max)
Package Height2.38(Max)
Package Length6.73(Max)
Product CategoryBipolar Power
Supplier PackageDPAK
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Minimum DC Current Gain40@4A@1V|60@2A@1V
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)1750
Maximum DC Collector Current (A)8
Maximum Emitter Base Voltage (V)5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Operating Junction Temperature (°C)-55 to 150
Maximum Collector-Emitter Voltage (V)80
Maximum Base Emitter Saturation Voltage (V)1.5@0.8A@8A
Maximum Collector-Emitter Saturation Voltage (V)1@0.4A@8A
Description
Trans GP BJT PNP 80V 8A 1750mW Automotive 3-Pin(2+Tab) DPAK T/R
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