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NJW44H11G
NJW44H11G
GP BJT NJW44H11G
onsemi
NJW44H11G
--
Diodes, Transistors and Thyristors
GP BJT
NJW44H11G.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width4.8
Package Height18.7
Package Length15.6
Product CategoryBipolar Power
Supplier PackageTO-3P
Standard Package NameTO-3P
SVHC Exceeds ThresholdYes
Minimum DC Current Gain100@2A@2V|80@4A@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)120000
Maximum DC Collector Current (A)10
Maximum Emitter Base Voltage (V)5
Maximum Transition Frequency (MHz)85(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)80
Maximum Collector-Emitter Saturation Voltage (V)1@400mA@8A
Description
Trans GP BJT NPN 80V 10A 120000mW 3-Pin(3+Tab) TO-3P Tube
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