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NJX1675PDR2G
NJX1675PDR2G
GP BJT NJX1675PDR2G
onsemi
NJX1675PDR2G
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Diodes, Transistors and Thyristors
GP BJT
NJX1675PDR2G.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN|PNP
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveYes
Lead ShapeGull-wing
PCB changed8
Part StatusObsolete
ConfigurationDual Dual Collector
Package Width4(Max)
Package Height1.5(Max)
Package Length5(Max)
Product CategoryBipolar Power
Supplier PackageSOIC N
Standard Package NameSOP
Minimum DC Current Gain100@10mA@2V|100@500mA@2V|180@1A@2V|180@2A@2V@NPN|150@2A@2V@PNP
Number of Elements per Chip2
Maximum Power Dissipation (mW)2000
Maximum DC Collector Current (A)3
Maximum Emitter Base Voltage (V)6@NPN|7@PNP
Maximum Collector Base Voltage (V)30
Maximum Transition Frequency (MHz)100(Min)@NPN|120(Typ)@PNP
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)30
Maximum Base Emitter Saturation Voltage (V)0.9@0.01A@1A
Maximum Collector-Emitter Saturation Voltage (V)0.011@0.01A@0.1A|0.06@0.1A@1A|0.115@0.01A@1A|0.115@0.2A@2A@NPN|0.017@0.01A@0.1A|0.095@0.1A@1A|0.17@0.01A@1A|0.17@0.2A@2A@PNP
Description
Trans GP BJT NPN/PNP 30V 3A 2000mW Automotive 8-Pin SOIC N T/R
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