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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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NSS12100UW3TCG
NSS12100UW3TCG
GP BJT NSS12100UW3TCG
onsemi
NSS12100UW3TCG
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Diodes, Transistors and Thyristors
GP BJT
NSS12100UW3TCG.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
TypePNP
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeNo Lead
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width2
Package Height0.75(Max)
Package Length2
Product CategoryBipolar Power
Supplier PackageWDFN EP
Standard Package NameDFN
Minimum DC Current Gain200@10mA@2V|100@500mA@2V|75@1A@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1100
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)12
Maximum Transition Frequency (MHz)200(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)12
Maximum Collector Cut-Off Current (nA)100
Maximum Base Emitter Saturation Voltage (V)1.15@0.01A@1A
Maximum Collector-Emitter Saturation Voltage (V)0.04@0.005A@0.05A|0.1@0.002A@0.1A|0.06@0.01A@0.1A|0.225@0.05A@0.5A|0.44@0.1A@1A
Description
Trans GP BJT PNP 12V 1A 1100mW 3-Pin WDFN EP T/R
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