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NSS12200WT1G
NSS12200WT1G
GP BJT NSS12200WT1G
onsemi
NSS12200WT1G
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Diodes, Transistors and Thyristors
GP BJT
NSS12200WT1G.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
TypePNP
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
PCB changed6
Part StatusLTB
ConfigurationSingle Quad Collector
Package Width1.25
Package Height0.9
Package Length2
Product CategoryBipolar Small Signal
Supplier PackageSC-88
Standard Package NameSC
Minimum DC Current Gain100@0.5A@1.5V|100@0.8A@1.5V|100@1A@1.5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)650
Maximum DC Collector Current (A)2
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)12
Maximum Transition Frequency (MHz)100(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)12
Maximum Base Emitter Saturation Voltage (V)0.95@20mA@1A
Maximum Collector-Emitter Saturation Voltage (V)0.16@10mA@0.5A|0.235@16mA@0.8A|0.29@20mA@1A
Description
Trans GP BJT PNP 12V 2A 650mW Automotive 6-Pin SC-88 T/R
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