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GP BJT NSS12501UW3T2G
onsemi
NSS12501UW3T2G
--
Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| Type | NPN |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | No Lead |
| PCB changed | 3 |
| Part Status | Active |
| Configuration | Single |
| Package Width | 2 |
| Package Height | 0.75(Max) |
| Package Length | 2 |
| Product Category | Bipolar Power |
| Supplier Package | WDFN EP |
| Standard Package Name | DFN |
| Minimum DC Current Gain | 200@10mA@2V|200@500mA@2V|200@1A@2V|200@2A@2V |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 1500 |
| Maximum DC Collector Current (A) | 5 |
| Maximum Emitter Base Voltage (V) | 6 |
| Maximum Collector Base Voltage (V) | 12 |
| Maximum Transition Frequency (MHz) | 150(Min) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Collector-Emitter Voltage (V) | 12 |
| Maximum Base Emitter Saturation Voltage (V) | 0.9@0.01A@1A |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.1@0.02A@2A|0.12@0.03A@3A|0.12@0.4A@4A|0.008@0.01A@0.1A|0.035@0.1A@1A|0.06@0.01A@1A |
| Description |
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