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NSS1C200MZ4T1G
NSS1C200MZ4T1G
GP BJT NSS1C200MZ4T1G
onsemi
NSS1C200MZ4T1G
--
Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypePNP
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
ConfigurationSingle Dual Collector
Package Width3.5
Package Height1.57
Package Length6.5
Product CategoryBipolar Power
Supplier PackageSOT-223
Standard Package NameSOT
SVHC Exceeds ThresholdYes
Minimum DC Current Gain120@500mA@2V|150@10mA@2V|80@1A@2V|50@2A@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)2000
Maximum DC Collector Current (A)2
Maximum Emitter Base Voltage (V)7
Maximum Collector Base Voltage (V)140
Maximum Transition Frequency (MHz)120(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)100
Maximum Collector Cut-Off Current (nA)100
Maximum Base Emitter Saturation Voltage (V)0.95@0.1A@1A
Maximum Collector-Emitter Saturation Voltage (V)0.08@0.05A@0.5A|0.04@0.01A@0.1A|0.125@0.1A@1A|0.22@0.2A@2A
Description
Trans GP BJT PNP 100V 2A 2000mW Automotive 4-Pin(3+Tab) SOT-223 T/R
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