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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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NSS35200MR6T1G
NSS35200MR6T1G
GP BJT NSS35200MR6T1G
onsemi
NSS35200MR6T1G
--
Diodes, Transistors and Thyristors
GP BJT
NSS35200MR6T1G.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
TypePNP
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeGull-wing
PCB changed6
Part StatusActive
ConfigurationSingle Quad Collector
Package Width1.5
Package Height0.94
Package Length3
Product CategoryBipolar Power
Supplier PackageTSOP
Standard Package NameSOP
Minimum DC Current Gain100@1A@1.5V|100@1.5A@1.5V|100@2A@3V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)2
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)55
Maximum Transition Frequency (MHz)100(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Operating Junction Temperature (°C)-55 to 150
Maximum Collector-Emitter Voltage (V)35
Maximum Collector Cut-Off Current (nA)100
Maximum Base Emitter Saturation Voltage (V)0.85@0.012A@1.2A
Maximum Collector-Emitter Saturation Voltage (V)0.15@0.008A@0.8A|0.2@0.012A@1.2A|0.31@0.02A@2A
Description
Trans GP BJT PNP 35V 2A 1000mW 6-Pin TSOP T/R
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