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NSS40301MDR2G
NSS40301MDR2G
GP BJT NSS40301MDR2G
onsemi
NSS40301MDR2G
--
Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusActive
ConfigurationDual Dual Collector
Package Width4(Max)
Package Height1.5(Max)
Package Length5(Max)
Product CategoryBipolar Small Signal
Supplier PackageSOIC N
Standard Package NameSOP
Minimum DC Current Gain200@10mA@2V|200@500mA@2V|180@1A@2V|180@2A@2V
Number of Elements per Chip2
Maximum Power Dissipation (mW)783
Maximum DC Collector Current (A)3
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)40
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Operating Junction Temperature (°C)-55 to 150
Maximum Collector-Emitter Voltage (V)40
Maximum Collector Cut-Off Current (nA)100
Maximum Base Emitter Saturation Voltage (V)0.9@0.01A@1A
Maximum Collector-Emitter Saturation Voltage (V)0.011@0.01A@0.1A|0.06@0.1A@1A|0.115@0.01A@1A|0.115@0.2A@2A
Description
Trans GP BJT NPN 40V 3A 783mW Automotive 8-Pin SOIC N T/R
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