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GP BJT NSS40500UW3T2G
onsemi
NSS40500UW3T2G
--
Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.21.00.95 |
| PPAP | No |
| Type | PNP |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | No Lead |
| PCB changed | 3 |
| Part Status | Active |
| Configuration | Single |
| Package Width | 2 |
| Package Height | 0.75(Max) |
| Package Length | 2 |
| Product Category | Bipolar Power |
| Supplier Package | WDFN EP |
| Standard Package Name | DFN |
| Minimum DC Current Gain | 250@500mA@2V|220@1A@2V|180@2A@2V|150@3A@2V|250@10mA@2V |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 1500 |
| Maximum DC Collector Current (A) | 5 |
| Maximum Emitter Base Voltage (V) | 7 |
| Maximum Collector Base Voltage (V) | 40 |
| Maximum Transition Frequency (MHz) | 100(Min) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Collector-Emitter Voltage (V) | 40 |
| Maximum Collector Cut-Off Current (nA) | 100 |
| Maximum Base Emitter Saturation Voltage (V) | 0.9@0.01A@1A |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.015@0.01A@0.1A|0.08@0.1A@1A|0.22@0.02A@2A|0.26@0.4A@4A|0.13@0.01A@1A|0.34@0.03A@3A |
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