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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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NSS60101DMTTBG
NSS60101DMTTBG
GP BJT NSS60101DMTTBG
onsemi
NSS60101DMTTBG
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Diodes, Transistors and Thyristors
GP BJT
NSS60101DMTTBG.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeNo Lead
PCB changed6
Part StatusActive
ConfigurationDual
Package Width2
Package Height0.75(Max)
Package Length2
Product CategoryBipolar Power
Supplier PackageWDFN EP
Standard Package NameDFN
Minimum DC Current Gain150@100mA@2V|90@1A@2V|120@500mA@2V|35@2A@2V
Number of Elements per Chip2
Maximum Power Dissipation (mW)2270
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)60
Maximum Transition Frequency (MHz)180(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)60
Maximum Collector Cut-Off Current (nA)100
Maximum Base Emitter Saturation Voltage (V)1@50mA@500mA|1@50mA@1A|1.1@100mA@1A
Maximum Collector-Emitter Saturation Voltage (V)0.2@50mA@1A|1.1@100mA@1A|0.1@50mA@500mA
Description
Trans GP BJT NPN 60V 1A 2270mW 6-Pin WDFN EP T/R
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