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GP BJT NST3946DXV6T5G
onsemi
NST3946DXV6T5G
--
Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.21.00.95 |
| PPAP | No |
| Type | NPN|PNP |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Lead Shape | Flat |
| PCB changed | 6 |
| Part Status | LTB |
| Configuration | Dual |
| Package Width | 1.2 |
| Package Height | 0.55 |
| Package Length | 1.6 |
| Product Category | Bipolar Small Signal |
| Supplier Package | SOT-563 |
| Standard Package Name | SOT |
| Minimum DC Current Gain | 100@10mA@1V|60@50mA@1V|40@0.1mA@1V|70@1mA@1V|30@100mA@1V@NPN|60@0.1mA@1V|80@1mA@1V|30@100mA@1V@PNP |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 500 |
| Maximum DC Collector Current (A) | 0.2 |
| Maximum Emitter Base Voltage (V) | 6@NPN|5@PNP |
| Maximum Collector Base Voltage (V) | 60@NPN|40@PNP |
| Maximum Transition Frequency (MHz) | 300(Min)@NPN|250(Min)@PNP |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Collector-Emitter Voltage (V) | 40 |
| Maximum Base Emitter Saturation Voltage (V) | 0.85@1mA@10mA|0.95@5mA@50mA |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.2@1mA@10mA|0.3@5mA@50mA@NPN|0.25@1mA@10mA|0.4@5mA@50mA@PNP |
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