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NSV20101JT1G
NSV20101JT1G
GP BJT NSV20101JT1G
onsemi
NSV20101JT1G
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Diodes, Transistors and Thyristors
GP BJT
NSV20101JT1G.pdf
Specification
Product AttributeAttribute Value
PPAPYes
TypeNPN
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveYes
Lead ShapeFlat
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width0.85
Package Height0.7
Package Length1.6
Product CategoryBipolar Small Signal
Supplier PackageSC-89
Standard Package NameSC-89
Minimum DC Current Gain200@10mA@2V|200@100mA@2V|150@500mA@2V|100@1A@2V
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)300
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)40
Maximum Transition Frequency (MHz)350(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)20
Maximum Collector Cut-Off Current (nA)100
Maximum Base Emitter Saturation Voltage (V)1.1@50mA@0.5A
Maximum Collector-Emitter Saturation Voltage (V)0.015@0.5mA@10mA|0.115@0.05A@0.5A|0.04@0.01A@0.1A|0.22@0.1A@1A
Description
Trans GP BJT NPN 20V 1A 300mW Automotive 3-Pin SC-89 T/R
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