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NSV40301MDR2G
NSV40301MDR2G
GP BJT NSV40301MDR2G
onsemi
NSV40301MDR2G
--
Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
PPAPYes
TypeNPN
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveYes
Lead ShapeGull-wing
PCB changed8
Part StatusActive
ConfigurationDual Dual Collector
Package Width4(Max)
Package Height1.5(Max)
Package Length5(Max)
Product CategoryBipolar Small Signal
Supplier PackageSOIC N
Standard Package NameSOP
Minimum DC Current Gain200@10mA@2V|200@500mA@2V|180@1A@2V|180@2A@2V
Number of Elements per Chip2
Maximum Power Dissipation (mW)783
Maximum DC Collector Current (A)3
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)40
Maximum Transition Frequency (MHz)100(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)40
Maximum Collector Cut-Off Current (nA)100
Maximum Base Emitter Saturation Voltage (V)0.9@0.01A@1A
Maximum Collector-Emitter Saturation Voltage (V)0.011@0.01A@0.1A|0.06@0.1A@1A|0.115@0.01A@1A|0.115@0.2A@2A
Description
Trans GP BJT NPN 40V 3A 783mW Automotive 8-Pin SOIC N T/R
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