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NSV60601MZ4T3G
NSV60601MZ4T3G
GP BJT NSV60601MZ4T3G
onsemi
NSV60601MZ4T3G
--
Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
TabTab
PPAPYes
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveYes
Lead ShapeGull-wing
PCB changed3
Part StatusActive
ConfigurationSingle Dual Collector
Package Width3.5
Package Height1.57
Package Length6.5
Product CategoryBipolar Power
Supplier PackageSOT-223
Standard Package NameSOT
SVHC Exceeds ThresholdYes
Minimum DC Current Gain150@500mA@2V|120@1A@2V|100@2A@2V|50@6A@2V
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)2000
Maximum DC Collector Current (A)6
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)100
Maximum Transition Frequency (MHz)100(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Operating Junction Temperature (°C)-55 to 150
Maximum Collector-Emitter Voltage (V)60
Maximum Collector Cut-Off Current (nA)100
Maximum Base Emitter Saturation Voltage (V)0.9@0.1A@1A
Maximum Collector-Emitter Saturation Voltage (V)0.04@2mA@0.1A|0.06@0.1A@1A|0.1@0.2A@2A|0.22@60mA@3A|0.3@0.6A@6A
Description
Trans GP BJT NPN 60V 6A 2000mW Automotive 4-Pin(3+Tab) SOT-223 T/R
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