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NSVBSS63LT1G
NSVBSS63LT1G
GP BJT NSVBSS63LT1G
onsemi
NSVBSS63LT1G
--
Diodes, Transistors and Thyristors
GP BJT
NSVBSS63LT1G.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPYes
TypePNP
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveYes
Lead ShapeGull-wing
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width1.3
Package Height0.94
Package Length2.9
Product CategoryBipolar Small Signal
Supplier PackageSOT-23
Standard Package NameSOT
Minimum DC Current Gain30@10mA@1V|30@25mA@1V
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)300
Maximum DC Collector Current (A)0.1
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)110
Maximum Transition Frequency (MHz)95(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)100
Maximum Base Emitter Saturation Voltage (V)0.9@2.5mA@25mA
Maximum Collector-Emitter Saturation Voltage (V)0.25@2.5mA@25mA
Description
Trans GP BJT PNP 100V 0.1A 300mW Automotive 3-Pin SOT-23 T/R
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